Ge/Si avalanche photodiode with integrated heater and fabrication method thereof
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United States of America Patent
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Feb 28, 2017
Grant Date -
Jun 2, 2016
app pub date -
Feb 3, 2016
filing date -
Feb 21, 2014
priority date (Note) -
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Abstract
Various embodiments of a novel structure of a Ge/Si avalanche photodiode with an integrated heater, as well as a fabrication method thereof, are provided. In one aspect, a doped region is formed either on the top silicon layer or the silicon substrate layer to function as a resistor. When the environmental temperature decreases to a certain point, a temperature control loop will be automatically triggered and a proper bias is applied along the heater, thus the temperature of the junction region of a Ge/Si avalanche photodiode is kept within an optimized range to maintain high sensitivity of the avalanche photodiode and low bit-error rate level.
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