Method of forming a trench in a semiconductor device
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United States of America Patent
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Feb 28, 2017
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app pub date -
Feb 4, 2016
filing date -
Feb 5, 2015
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Abstract
A method to make a semiconductor device, a first SiO2 layer and a first Si3N4 layer are sequentially formed on the semiconductor substrate. The first SiO2 layer and the first Si3N4 layer are then patterned as etching mask to form a trench in a semiconductor substrate by a trench etching process. After this, a second SiO2 layer and a second Si3N4 layer are formed conformal onto the substrate. Anisotropic etching is then performed to remove the second Si3N4 and second SiO2 layer except on the trench sidewall. Then a thermal oxidation process is done to grow oxide only in trench bottom and at trench top corner. The radius of curvature of trench bottom and trench top corner is increased at the same time by this thermal oxidation process.
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