Lateral power MOSFET
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United States of America Patent
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Feb 28, 2017
Grant Date -
N/A
app pub date -
Apr 18, 2011
filing date -
Apr 16, 2010
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Abstract
A lateral power MOSFET structure is disclosed. In some embodiments, a semiconductor device comprises substantially concentric source, channel, and drain regions; a metal layer at least in part comprising a drain plane disposed over the source, channel, and drain regions; and a metal layer at least in part comprising a source plane disposed over the source, channel, and drain regions.
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