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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
GLOBALWAFERS CO LTD	NO 8 INDUSTRIAL EAST ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSINCHU

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
• C30B:SINGLE-CRYSTAL GROWTH

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Albrecht, Peter D	O'Fallon, US	23	401
# of filed Patents : 23 Total Citations : 401
Falster, Robert J	London, GB	88	1010
# of filed Patents : 88 Total Citations : 1010
Pitney, John A	O'Fallon, US	19	1083
# of filed Patents : 19 Total Citations : 1083
Voronkov, Vladimir V	Merano, IT	23	397
# of filed Patents : 23 Total Citations : 397

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Patent Citation Ranking

• 5 Citation Count
• H01L Class

• 18.50 % this patent is cited more than
• 8 Age

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date
11.5 Year Payment	$7400.00	$3700.00	$1850.00	Aug 28, 2028

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge - 11.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
February 28, 2017	US,9583363,B2   US9583363B2	GRANTED PATENT AS SECOND PUBLICATION
July 03, 2014	US,20140187022,A1   US20140187022A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent No: 9583363

Processes and apparatus for preparing heterostructures with reduced strain by radial distension

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Abstract

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Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure.

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Description

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Claims

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Legal Events

 

• MAFP2024
• MAFP2020
• AS2018
• I2017
• STCF2017
• P2014
• AS2014
• AS2014
• AS2014
• F2013

Date	Code	Event	Description
May 03, 2024	MAFP	MAINTENANCE FEE PAYMENT	free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY year of fee payment: 8
Jul 01, 2020	MAFP	MAINTENANCE FEE PAYMENT	free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY year of fee payment: 4
Jun 06, 2018	AS	ASSIGNMENT	free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SUNEDISON SEMICONDUCTOR LIMITED;MEMC JAPAN LIMITED;MEMC ELECTRONIC MATERIALS S.P.A.;REEL/FRAME:046327/0001 Owner name: GLOBALWAFERS CO., LTD., TAIWAN Effective Date: Jun 06, 2018
Feb 28, 2017	I	Issuance
Feb 08, 2017	STCF	INFORMATION ON STATUS: PATENT GRANT	free format text: PATENTED CASE
Jul 03, 2014	P	Published
May 21, 2014	AS	ASSIGNMENT	free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SUNEDISON SEMICONDUCTOR PTE. LTD. (UEN201334164H);REEL/FRAME:032947/0117 Owner name: SUNEDISON SEMICONDUCTOR LIMITED (UEN201334164H), S Effective Date: May 21, 2014
May 01, 2014	AS	ASSIGNMENT	free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FALSTER, ROBERT J.;VORONKOV, VLADIMIR V.;PITNEY, JOHN A.;AND OTHERS;SIGNING DATES FROM 20140424 TO 20140429;REEL/FRAME:032798/0416 Owner name: SUNEDISON SEMICONDUCTOR PTE. LTD. (UEN201334164H),
Apr 14, 2014	AS	ASSIGNMENT	free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FALSTER, ROBERT J.;VORONKOV, VLADIMIR V.;ALBRECHT, PETER D.;SIGNING DATES FROM 20130313 TO 20130327;REEL/FRAME:032667/0872 Owner name: MEMC ELECTRONIC MATERIALS, INC., MISSOURI
Dec 27, 2013	F	Filing