Methods for evaluating strain of crystalline devices
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United States of America Patent
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Feb 28, 2017
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app pub date -
Mar 30, 2016
filing date -
Mar 30, 2016
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Abstract
Methods for evaluating strain of crystalline structure are provided herein. In accordance with an exemplary embodiment, a method for evaluating strain of a crystalline structure includes directing an electron beam at the crystalline structure to produce an electron diffraction pattern including a reflection point area. The electron diffraction pattern is detected with a detector that includes a plurality of pixels to produce a raw data set. The raw data set is filtered by applying a mathematical median filter to produce a filtered data set, and a contrast of the filtered data set is enhanced to produce an enhanced data set. A center point of the reflection point area is determined with the enhanced data set, and the strain of the crystalline structure is determined based on analysis of the center point.
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