Photovoltaic cells with multi-band gap and applications in a low temperature polycrystalline silicon thin film transistor panel
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United States of America Patent
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Feb 21, 2017
Grant Date -
Jan 8, 2009
app pub date -
Sep 2, 2008
filing date -
Jan 25, 2007
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Abstract
One aspect of the present invention relates to a photovoltaic cell. In one embodiment, the photovoltaic cell includes a first conductive layer, an N-doped semiconductor layer formed on the first conductive layer, a first silicon layer formed on the N-doped semiconductor layer, a nanocrystalline silicon (nc-Si) layer formed on a first silicon layer, a second silicon layer formed on the nc-Si layer, a P-doped semiconductor layer on the second silicon layer, and a second conductive layer formed on the P-doped semiconductor layer, where one of the first silicon layer and the second silicon layer is formed of amorphous silicon, and the other of the first silicon layer and the second silicon layer formed of polycrystalline silicon.
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