Focused ion beam systems and methods of operation
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United States of America Patent
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Feb 21, 2017
Grant Date -
Mar 31, 2016
app pub date -
Mar 18, 2014
filing date -
May 15, 2013
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Abstract
A focused ion beam system is provided. The focused ion beam system includes a plasma generation chamber configured to contain a source gas that is radiated with microwaves to produce plasma. The plasma generation chamber includes a plasma confinement device configured to confine the plasma in radial and axial directions within the plasma generation chamber and to form a plasma meniscus at an extraction end of the plasma generation chamber. The focused ion beam system also includes a beam extraction chamber configured to extract a focused ion beam from the confined plasma and to focus the extracted focused ion beam on a workpiece.

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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
INDIAN INSTITUTE OF TECHNOLOGY KANPUR | KANPUR UTTAR PRADESH 208016 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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Bhattacharjee, Sudeep | Kanpur, IN | 2 | 8 |
Mathew, Jose Vettiyankal | Mumbai, IN | 1 | 6 |
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