Focused ion beam systems and methods of operation

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United States of America Patent

PATENT NO 9576767
APP PUB NO 20160093463A1
SERIAL NO

14891046

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Abstract

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A focused ion beam system is provided. The focused ion beam system includes a plasma generation chamber configured to contain a source gas that is radiated with microwaves to produce plasma. The plasma generation chamber includes a plasma confinement device configured to confine the plasma in radial and axial directions within the plasma generation chamber and to form a plasma meniscus at an extraction end of the plasma generation chamber. The focused ion beam system also includes a beam extraction chamber configured to extract a focused ion beam from the confined plasma and to focus the extracted focused ion beam on a workpiece.

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Patent Owner(s)

Patent OwnerAddress
INDIAN INSTITUTE OF TECHNOLOGY KANPURKANPUR UTTAR PRADESH 208016

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bhattacharjee, Sudeep Kanpur, IN 2 8
Mathew, Jose Vettiyankal Mumbai, IN 1 6

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