Apparatus and method for programming a multi-level phase change memory (PCM) cell based on an actual resistance value and a reference resistance value
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United States of America Patent
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Feb 21, 2017
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Oct 24, 2012
filing date -
Mar 30, 2010
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Abstract
An apparatus for programming at least one multi-level Phase Change Memory (PCM) cell having a first terminal and a second terminal. A programmable control device controls the PCM cell to have a respective cell state by applying at least one current pulse to the PCM cell, the control device controlling the at least one current pulse by applying a respective first pulse to the first terminal and a respective second pulse applied to the second terminal of the PCM cell. The respective cell state is defined by a respective resistance level. The control device receives a reference resistance value defining a target resistance level for the cell, and further receives an actual resistance value of said PCM cell such that the applying the respective first pulse and said respective second pulse is based on said actual resistance value of the PCM cell and said received reference resistance value.
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