Semiconductor device and patterning method for plated electrode thereof
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United States of America Patent
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Feb 14, 2017
Grant Date -
May 5, 2016
app pub date -
Jan 29, 2015
filing date -
Nov 4, 2014
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Abstract
The present invention discloses in detail a semiconductor device and a patterning method for the plated electrode thereof. By using the laser ablation method according to the prior art, the semiconductor substrate below the ARC is damaged by direct destructive burning. According to the present invention, an additional protection layer is inserted between the ARC and the semiconductor substrate. Then a laser is used for heating and liquefying the protection layer below the ARC, and thus separating the ARC from the liquefied protection layer underneath and forming pattered openings. Afterwards, by a plating process, nickel and copper can plated.
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