Transistor and method of making
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United States of America Patent
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Feb 14, 2017
Grant Date -
Jun 30, 2016
app pub date -
Dec 14, 2012
filing date -
Dec 14, 2012
priority date (Note) -
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Abstract
A SiGe HBT has an inverted heterojunction structure, where the emitter layer is formed prior to the base layer and the collector layer. The frequency performance of the SiGe HBT is significantly improved through a better thermal process budget for the base profile, essential for higher cut-off frequency (fT) and a minimal collector-base area for a reduced parasitic capacitance, essential for higher maximum oscillation frequency (fmax). This inverted heterojunction structure can be fabricated by using ALE processes to form an emitter on a preformed epitaxial silicide, a base over the emitter and a collector over the base.
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