Manufacturing method and manufacturing equipment of thin film transistor substrate

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United States of America Patent

PATENT NO 9570482
APP PUB NO 20160351601A1
SERIAL NO

14407865

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A manufacturing method and a manufacturing equipment of a thin film transistor substrate are provided. In the manufacturing method, after forming a gate and a gate insulating layer of a thin film transistor, a semiconductor layer and a first protection layer are sequentially deposited. After patterning the first protection layer, the patterned first protection layer is used as a mask to pattern the semiconductor layer to form a semiconductor channel of the thin film transistor. By the above solution, the invention can reduce the number of mask and therefore is beneficial to reduce the cost.

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Patent Owner(s)

  • SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Wenhui Guangdong, CN 104 308
Lv, Xiaowen Guangdong, CN 81 163
Shi, Longqiang Guangdong, CN 103 229
Su, Chih-yu Guangdong, CN 7 15
Tseng, Chih-yuan Guangdong, TW 20 70

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