Method for manufacturing semiconductor memory device
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United States of America Patent
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Feb 14, 2017
Grant Date -
Dec 24, 2015
app pub date -
Jun 5, 2015
filing date -
Jun 24, 2014
priority date (Note) -
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Abstract
According to one embodiment, a method for manufacturing a semiconductor memory device includes forming a stacked body including a plurality of first layers and a plurality of second layers on a substrate. The method includes forming a first slit and a second slit simultaneously by dry-etching the stacked body. The first slit causes a part of the stacked body to have a comb-shaped pattern including a plurality of line parts isolated in a first direction and extending in a second direction. The second slit surrounds the comb-shaped pattern with a closed pattern. The method includes forming a hole in the line parts of the stacked body. The method includes forming a charge storage film and a semiconductor body in the hole.
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