Method of growing nanostructured single crystal silver on active carbon

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United States of America Patent

PATENT NO 9567689
APP PUB NO 20150128848A1
SERIAL NO

14078375

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Abstract

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A method of preparing nanostructured single crystal silver, comprising placing a high-conductive molded porous active carbon containing chloride ions, which has been reductively treated, into a silver-containing precursor solution. After several hours at room temperature, the nanostructured single crystal silver grows on the surface of the active carbon. The silver-containing precursors and appropriate amount of chlorine provide a crystal nucleus and a slow stable crystal growth environment which are required for single crystal silver growth, and said nanostructured silver single crystals could be obtained with various morphologies by controlling the concentration of the silver-containing precursor solution and the growth time. The method of the invention is an environmentally friendly synthesis method with the nanostructured single crystal silver grows on the surface of the molded porous active carbon at room temperature, which is pollution-free and does not need any additives.

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Patent Owner(s)

Patent OwnerAddress
SHANGHAI JIAO TONG UNIVERSITY200240 NO 800 DONGCHUAN ROAD SHANGHAI MINHANG DISTRICT SHANGHAI CITY SHANGHAI CITY 200240
SHANGHAI SWITCHDIY DIGITAL TECHNOLOGY CO LTD1301 XINFEI ROAD SONGJIANG DISTRICT SHANGHAI 201611

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lai, Yijian Shanghai, CN 5 6
Ning, Yuesheng Shanghai, CN 3 5
Wang, Fei Shanghai, CN 1116 10607
Wang, Lei Shanghai, CN 2386 21419
Zhao, Binyuan Shanghai, CN 5 6
Zhao, Hong Shanghai, CN 291 4048
Zhou, Jie Shanghai, CN 298 2626

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