Method and apparatus for fabricating dielectric structures

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United States of America Patent

PATENT NO 9564329
SERIAL NO

14553436

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Abstract

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A composite dielectric structure having one or more Leakage Blocking Layers (LBL) interleaved with one or more Laminate Dielectric Layers (LDL), Alloy Dielectric Layers (ADL), or Co-deposit Dielectric Layers (CDL). Each LDL, ADL, and CDL includes dopants incorporated in a respective base dielectric layer (BDL); where LDLs are formed by incorporating a doping layer into a BDL using a laminate method, ADLs are formed by incorporating a dopant into a BDL using an alloying method; and CDLs are formed by pulsing a BDL base material and a dopant together using a co-deposit method.

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Patent Owner(s)

  • AIXTRON SE;EUGENE TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Minghang San Jose, US 5 97
Lu, Brian Fremont, US 21 773
Song, Kay San Jose, US 2 295

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