SEMICONDUCTOR LIGHT EMITTING DEVICE
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United States of America Patent
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Jan 31, 2017
Grant Date -
Feb 23, 2017
app pub date -
Mar 3, 2016
filing date -
Aug 21, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface; an n-side electrode including a first n-side electrode and a second n-side electrode; a first contact unit; a second contact unit; an n-side interconnect unit; a p-side electrode; and an insulating film. The insulating film includes a first insulating portion, a second insulating portion, a third insulating portion, and a fourth insulating portion.
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