Nitride underlayer and fabrication method thereof
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United States of America Patent
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Jan 31, 2017
Grant Date -
Oct 1, 2015
app pub date -
Jun 14, 2015
filing date -
Mar 28, 2013
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Abstract
A nitride layer with embedded hole structure can be used for fabricating GaN-based LED of high external quantum efficiency through epitaxial growth. The approaches can have advantages such as reducing the complexity chip process for forming hole structure, reducing impacts from the chip process on chip reliability, effective reduction of hole structure size and increase of device stability, crush resistance, and reliability. A fabrication method of an underlayer structure with embedded micro-hole structure is also provided.
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