Method for forming MOS device passivation layer and MOS device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 31, 2017
Grant Date -
Dec 17, 2015
app pub date -
Jul 25, 2013
filing date -
Jul 26, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention provides a method of forming a passivation layer of a MOS device, and a MOS device. The method of forming a passivation layer of a MOS device includes: forming a substrate; forming a dielectric on the substrate; patterning the dielectric to expose a part of the substrate; forming a metal on the exposed part of the substrate, and the dielectric; forming a TEOS on the metal; forming a PSG on the TEOS; and forming a silicon nitrogen compound on the PSG. Therefore, the cracks problem of the passivation can be alleviated.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully