Method for fabricating semiconductor devices having reinforcing elements
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United States of America Patent
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Jan 24, 2017
Grant Date -
Aug 18, 2016
app pub date -
Oct 26, 2015
filing date -
Feb 16, 2015
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Abstract
The present disclosure provides a method for fabricating semiconductor devices having reinforcing elements. The method includes steps of providing a first wafer having a lower electrode layer and an insulation layer; forming a device layer; etching the device layer and the insulation layer to form recesses; etching the device layer to form separation trenches and upper electrodes; forming reinforcing elements; and depositing metal pads. The reinforcing elements strengthen the integration of the upper electrodes and the insulation layer.
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