Method of controlling an ion implanter in plasma immersion mode
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United States of America Patent
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Jan 24, 2017
Grant Date -
Nov 6, 2014
app pub date -
Oct 4, 2012
filing date -
Oct 6, 2011
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Abstract
The present invention relates to a method of controlling an ion implanter having a plasma power supply AP and a substrate power supply, the substrate power supply comprising:
- an electricity generator;a first switch SW1 connected between the generator and the output terminal of the substrate power supply; anda second switch SW2 connected between the output terminal and a neutralization terminal;the method including an implantation stage A-D and a neutralization stage E-H. The method also includes a relaxation stage C-F overlapping the implantation stage and the neutralization stage, during which relaxation stage the plasma power supply is inactivated. Furthermore, the neutralization stage includes a preliminary step E-F for closing the second switch, this preliminary step being followed by a cancellation step F-G for activating the plasma power supply AP.
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