Apparatus and method for combined micro-scale and nano-scale C-V, Q-V, and I-V testing of semiconductor materials

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United States of America Patent

PATENT NO 9551743
APP PUB NO 20120146669A1
SERIAL NO

13398681

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Abstract

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Current Voltage and Capacitance Voltage (IV and CV) measurements are critical in measurement of properties of electronic materials especially semiconductors. A semiconductor testing device to accomplish IV and CV measurement supports a semiconductor wafer and provides a probe for contacting a surface on the wafer under control of an atomic Force Microscope or similar probing device for positioning the probe to a desired measurement point on the wafer surface. Detection of contact by the probe on the surface is accomplished and test voltage is supplied to the semiconductor wafer. A first circuit for measuring capacitance sensed by the probe based on the test voltage and a complimentary circuit for measuring Fowler Nordheim current sensed by the probe based on the test voltage are employed with the probe allowing the calculation of characteristics of the semiconductor wafer based on the measured capacitance and Fowler Nordheim current.

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Patent Owner(s)

Patent OwnerAddress
DCG SYSTEMS INC45900 NORTHPORT LOOP EAST FREMONT CA 94538

International Classification(s)

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  • 2012 Application Filing Year
  • G01Q Class
  • 88 Applications Filed
  • 79 Patents Issued To-Date
  • 89.78 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances201220132014201520162017201820190255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Erickson, Andrew N Santa Barbara, US 5 51

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  • 1 Citation Count
  • G01Q Class
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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges11 - 1000.050.10.150.20.250.30.350.40.450.50.550.60.650.70.750.80.850.90.9511.05

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