Al-based alloy sputtering target and Cu-based alloy sputtering target

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United States of America Patent

PATENT NO 9551065
APP PUB NO 20130306468A1
SERIAL NO

13981414

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Abstract

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Film-formation rate can be increased in the pre-sputtering and in the subsequent sputtering onto a substrate or the like, and sputtering failures such as splashes can be inhibited, by making an Al-based alloy or Cu-based alloy spurting target fulfill the following requirements (1) and/or (2) when the total area ratio of crystal orientations <001>±15°, <011>±15°, <111>±15°, <112>±15°, and <012>±15° in the sputtering surface normal direction in the depth within 1 mm from the uppermost surface of the sputtering target is referred to as a P value: (1) the area ratio PA of <011>±15° to the P value: 40% or lower; and (2) the total area ratio PB of <001>±15° and <111>±15° to the P value: 20% or higher.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL LTD )KOBE-SHI HYOGO 651-8585
KOBELCO RESEARCH INSTITUTE INC1-5-1 WAKINOHAMA-KAIGAN-DORI CHUO-KU KOBE-SHI HYOGO 6510073 ?6510073

International Classification(s)

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  • 2011 Application Filing Year
  • C23C Class
  • 1852 Applications Filed
  • 1328 Patents Issued To-Date
  • 71.71 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2011201220132014201520162017201820192020202120220255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsumoto, Katsushi Kobe, JP 54 430
Nakai, Junichi Takasago, JP 77 1085
Takagi, Toshiaki Takasago, JP 33 952

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges4219241045322915232201 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0501001502002503003504004505005506006507007508008509009501000

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