Quantum cascade laser design with stepped well active region
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United States of America Patent
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Jan 17, 2017
Grant Date -
May 30, 2013
app pub date -
Oct 26, 2012
filing date -
Nov 29, 2011
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Abstract
Included are embodiments of a quantum cascade laser structure. Some embodiments include a plurality of quantum wells and a plurality of barriers, at least a portion of which define an active region. In some embodiments, a photon is emitted in the active region when an electron transitions from an upper laser state in the active region to a lower laser state in the active region. Additionally, a final quantum well in the plurality of quantum wells may define the active region, where the final quantum well extends below an adjacent quantum well in the active region. Similarly, the final quantum well may include a thickness that is less than a thickness of the adjacent quantum well in the active region.
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