Semiconductor light-emitting device
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United States of America Patent
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Jan 17, 2017
Grant Date -
Mar 24, 2016
app pub date -
May 22, 2015
filing date -
Sep 19, 2014
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Abstract
A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.
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