Semiconductor device and method of manufacturing the same
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United States of America Patent
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Jan 17, 2017
Grant Date -
Jul 10, 2014
app pub date -
Aug 27, 2012
filing date -
Jul 25, 2012
priority date (Note) -
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Abstract
The present invention discloses a semiconductor device, comprising a plurality of fins located on a substrate and extending along a first direction; a plurality of gate stack structures extending along a second direction and across each of the fins; a plurality of stress layers located in the fins on both sides of the gate stack structures and having a plurality of source and drain regions therein; a plurality of channel regions located in the fins below the gate stack structures; characterized in that the stress layers have connected parts in the fins and that the channel regions enclose the connected parts.
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