Semiconductor device, circuit substrate, and electronic device
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United States of America Patent
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Jan 17, 2017
Grant Date -
May 12, 2016
app pub date -
Dec 28, 2015
filing date -
Oct 15, 2009
priority date (Note) -
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Abstract
A semiconductor device has a through electrode formed in a through hole which penetrates a Si substrate from one surface to the other surface of the Si substrate, wherein a rectangular electrode pad is provided on the other surface with an insulation film laid between the electrode pad and the other surface, an opening of the through hole on the one surface side is circular, an opening of the through hole on the other surface side is rectangular, and the area of the opening on the other surface side is made smaller than the area of the opening on the one surface side.
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