Semiconductor device structures comprising polycrystalline CVD diamond with improved near-substrate thermal conductivity

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United States of America Patent

PATENT NO 9548257
SERIAL NO

14909791

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Abstract

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A semiconductor device structure includes

    a layer of III-V compound semiconductor material,a layer of polycrystalline CVD diamond material, andan interface region with a diamond nucleation layer.

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Patent OwnerAddress
RFHIC CORPORATIONRFHIC BLDG 110 GWACHEON-DAERO 12-GIL GWACHEON-SI 13824

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nasser-Faili, Firooz Santa Clara, US 11 299

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