Compositions and methods for selectively etching titanium nitride
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United States of America Patent
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Jan 17, 2017
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Dec 27, 2012
filing date -
Dec 28, 2011
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Abstract
Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.
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