Transparent group III metal nitride and method of manufacture
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 10, 2017
Issued Date -
N/A
app pub date -
Sep 12, 2014
filing date -
Dec 12, 2008
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully