Manufacturing method of semiconductor device that includes forming plural nitride semiconductor layers of identical material
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United States of America Patent
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Jan 10, 2017
Grant Date -
Sep 15, 2016
app pub date -
Sep 1, 2015
filing date -
Mar 12, 2015
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Abstract
According to one embodiment, a manufacturing method of a semiconductor device, comprising: forming a first nitride semiconductor layer on a substrate using a first temperature; decreasing a substrate temperature to a second temperature lower than the first temperature, after the forming the first nitride semiconductor layer; forming a second nitride semiconductor layer on the first nitride semiconductor layer using the second temperature; increasing the substrate temperature to a third temperature higher than the first temperature, after the forming the second nitride semiconductor layer; and forming a third nitride semiconductor layer on the second nitride semiconductor layer using the third temperature.
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