Inductively coupled plasma processing apparatus

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United States of America Patent

PATENT NO 9543121
APP PUB NO 20120267051A1
SERIAL NO

13451867

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Abstract

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An inductively coupled plasma processing apparatus performs plasma processing on a substrate by generating an inductively coupled plasma in a plasma generation region in a processing chamber. The apparatus includes a high frequency antenna for generating the inductively coupled plasma in the plasma generation region and a metal window provided between the plasma generation region and the high frequency antenna. The metal window is firstly divided into two or more sections electrically insulated from each other by a line along a peripheral direction of the metal window and then secondly divided into sections electrically insulated from each other by lines along directions crossing with the peripheral direction.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDTOKYO JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sasaki, Kazuo Nirasaki, JP 146 1546
Tojo, Toshihiro Nirasaki, JP 4 8

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