Low power high speed program method for multi-time programmable memory device
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United States of America Patent
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Jan 10, 2017
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Sep 29, 2015
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Sep 29, 2015
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Abstract
A programming method for a PMOS multi-time programmable (MTP) flash memory device biases the select gate transistor to a constant drain current level and sweeps the control gate bias voltage from a low voltage level to a high voltage level while maintaining the cell current around a predetermined cell current limit level. In this manner, the PMOS MTP flash memory device can achieve low power and high speed program using hot carrier injection (HCI). The programming method of the present invention enables multi-bit programming of the PMOS MTP flash memory cells, thereby increasing the programming speed while preserving low power consumption.
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