Calibration curve formation method, impurity concentration measurement method, and semiconductor wafer manufacturing method
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United States of America Patent
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Jan 10, 2017
Grant Date -
Nov 26, 2015
app pub date -
May 22, 2015
filing date -
May 23, 2014
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Abstract
According to an embodiment, a method of forming a calibration curve is provided. The method includes ion-implanting different doses of an impurity into a plurality of first samples, measuring an intensity of photoluminescence deriving from the impurity by a photoluminescence spectroscopy for the first samples and a second sample made of the same semiconductor. Based on the amount of implanted impurity, the intensity of the photoluminescence, and a concentration of the impurity contained in the second sample measured by a method other than the photoluminescence spectroscopy, a calibration curve is formed.
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