Amorphous silicon crystallizing method, crystallized silicon film forming method, semiconductor device manufacturing method and film forming apparatus

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9540743
APP PUB NO 20150159295A1
SERIAL NO

14566069

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystallize silicones contained in at least the second amorphous silicon film.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDTOKYO

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Furusawa, Yoshikazu Nirasaki, JP 18 1283
Okada, Mitsuhiro Nirasaki, JP 154 2285
Takahashi, Kazuya Nirasaki, JP 177 2358
Yonekura, Hiromasa Nirasaki, JP 2 12

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jul 10, 2028
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00