Method for fabricating a light emitting diode (LED) die having strap layer
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United States of America Patent
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Jan 3, 2017
Grant Date -
Aug 4, 2016
app pub date -
Apr 14, 2016
filing date -
Jul 27, 2014
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Abstract
A method for fabricating a light emitting diode (LED) die includes the steps of forming an epitaxial stack on a substrate having an n-type semiconductor layer, multiple quantum well (MQW) layers, and a p-type semiconductor layer. The method also includes the steps of forming a plurality of trenches in the n-type semiconductor layer, and forming a strap layer having conductive straps and contact areas in the trenches, forming an electrical insulator layer on the strap layer, forming an n-pad on the n-type semiconductor layer, and forming a p-pad on the p-type semiconductor layer.
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