Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystal
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United States of America Patent
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Jan 3, 2017
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Oct 1, 2015
app pub date -
Oct 29, 2013
filing date -
Nov 19, 2012
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Abstract
A seed crystal for SiC single-crystal growth includes a facet formation region containing a {0001}-plane uppermost portion and n (n>=3) planes provided enclosing the periphery of the facet formation region. The seed crystal for SiC single-crystal growth satisfies the relationships represented by formula (a): Bkk-1<=cos−1(sin(2.3 degrees)/sin Ck), formula (b): Bkk<=cos−1(sin(2.3 degrees)/sin Ck), and formula (c): min(Ck)<=20 degrees. In the formulas, Ck is an offset angle of a k-th plane, Bkk-1 is an angle defined by an offset downstream direction of the k-th plane and a (k−1)-th ridge line, and Bkk is an angle defined by the offset downstream direction of the k-th plane and a k-th ridge line.
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