Anodic bonding of dielectric substrates
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United States of America Patent
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Jan 3, 2017
Grant Date -
Oct 20, 2016
app pub date -
Apr 14, 2016
filing date -
Apr 17, 2015
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Abstract
A first ion rich dielectric substrate with a patterned dielectric barrier and a oxidizable metal layer is anodically bonded to a second ion rich dielectric substrate. To bond the substrates, the oxidizable metal layer is oxidized. The dielectric barrier may inhibit the migration of these ions to the bondline, which might otherwise poison the bond strength. Accordingly, when joining the two substrates, a strong bond is maintained between the wafers.
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