Nitride semiconductor substrate
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United States of America Patent
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Dec 27, 2016
Grant Date -
Oct 6, 2016
app pub date -
Mar 29, 2016
filing date -
Mar 31, 2015
priority date (Note) -
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Abstract
A solution is formation of a nitride semiconductor layer on one principal plane of a single crystal substrate through a first layer. Upon selecting arbitrary three places in a radial direction from a cross section cleaved in a diameter portion and observing an interface between the first layer and the nitride semiconductor layer by taking a width of at least 500 nm in the radial direction, a value is within the range of 6 nm or more and 15 nm or less in a mean value of the three places with regard to a difference between a maximum height of a convex top portion and a minimum height of a concave bottom portion of the first layer in a thickness direction from the single crystal substrate toward the nitride semiconductor layer. A value is 10 nm or more and 25 nm or less in the mean value.
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