Extreme ultraviolet lithography process and mask
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United States of America Patent
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Dec 27, 2016
Grant Date -
May 21, 2015
app pub date -
Jul 15, 2014
filing date -
Nov 15, 2013
priority date (Note) -
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Abstract
A system of an extreme ultraviolet lithography (EUVL) is disclosed. The system includes a mask having reflective phase-shift-grating-blocks (PhSGBs). The system also includes an illumination to expose the mask to produce a resultant reflected light from the mask. The resultant reflected light contains mainly diffracted lights. The system also has projection optics to collect and direct resultant reflected light to expose a target.
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