Method for estimating the end of lifetime for a power semiconductor device
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United States of America Patent
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Dec 27, 2016
Grant Date -
May 8, 2014
app pub date -
Jun 21, 2012
filing date -
Jun 21, 2011
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Abstract
The invention regards an method for estimating the end of lifetime for a power semiconductor device, such as an IGBT power module, comprising the steps of; establishing the temperature of the power semiconductor device, determining the voltage drop over the power semiconductor device for at least one predetermined current where the current is applied when the power semiconductor device is not in operation, wherein the end of lifetime is established dependent on the change in a plurality of determined voltage drops.
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