Cobalt removal for chamber clean or pre-clean process
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United States of America Patent
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Dec 27, 2016
Grant Date -
Nov 6, 2014
app pub date -
Apr 17, 2014
filing date -
May 1, 2013
priority date (Note) -
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Abstract
Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.
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