Single crystal diamond
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United States of America Patent
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Dec 13, 2016
Grant Date -
Apr 10, 2008
app pub date -
May 3, 2007
filing date -
Sep 20, 2002
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Abstract
A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapor deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.
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