Methods for uniform imprint pattern transfer of sub-20 nm features
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United States of America Patent
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Dec 6, 2016
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Jul 2, 2015
app pub date -
Dec 30, 2014
filing date -
Dec 30, 2013
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Abstract
Methods of increasing etch selectivity in imprint lithography are described which employ material deposition techniques that impart a unique morphology to the multi-layer material stacks, thereby enhancing etch process window and improving etch selectivity. For example, etch selectivity of 50:1 or more between patterned resist layer and deposited metals, metalloids, or non-organic oxides can be achieved, which greatly preserves the pattern feature height prior to the etch process that transfers the pattern into the substrate, allowing for sub-20 nm pattern transfer at high fidelity.
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