Auto low current programming method without verify
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United States of America Patent
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Dec 6, 2016
Grant Date -
Jan 21, 2016
app pub date -
Jul 15, 2015
filing date -
Mar 25, 2014
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Abstract
A flash memory device employs a low current auto-verification programming scheme using multi-step programming voltage and cell current detection. The low current auto-verification programming scheme performs programming of memory cells by the application of programming voltages in step increments. For each programming pulse, the cell current of the memory cell is sensed to determine when the memory cell is programmed. The programming pulse is terminated when the cell current decreases below a reference current level.
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