Charge pump circuit suitable for low voltage operation
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United States of America Patent
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Nov 29, 2016
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N/A
app pub date -
Oct 22, 2015
filing date -
Oct 22, 2015
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Abstract
A charge pump device with NMOS transistor circuit is provided for low voltage operation. The charge pump stage, comprising four NMOS transistors and three capacitors, is configured to alleviate the substrate body effect and the charge transfer loss. The charge pump circuit can be constructed on a p-type semiconductor substrate directly without deep N well isolation. The circuit is driven by two non-overlapping complementary clock signals, which can be generated easily with an integrated fabrication. The charge pump device can be implemented with a multiple stage to provide a stable high voltage output.
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