High energy invisible light light emitting diode having safety indication
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United States of America Patent
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Nov 22, 2016
Grant Date -
Sep 29, 2016
app pub date -
Mar 23, 2015
filing date -
Mar 23, 2015
priority date (Note) -
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Abstract
The present invention includes a safety indication structure a high energy invisible light light emitting structure and two potential applying layers. The high energy invisible light light emitting structure includes a high energy invisible light light emitting layer that receives a forward to emit invisible light, and a P-type semiconductor layer and an N-type semiconductor layer respectively disposed at two sides of the high energy invisible light light emitting layer. The two potential applying layers are respectively in contact with the P-type semiconductor layer and the N-type semiconductor layer. The safety indication structure includes a photoluminescent light emitting layer disposed on the high energy invisible light light emitting structure. When the high energy invisible light light emitting structure emits invisible light, the photoluminescent light emitting layer absorbs and converts the invisible light to visible light, which serves as a signal warning for danger to ensure user safety.
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