Trench power metal oxide semiconductor field effect transistor and edge terminal structure including an L-shaped electric plate capable of raising a breakdown voltage
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United States of America Patent
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Nov 22, 2016
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N/A
app pub date -
Aug 6, 2015
filing date -
May 24, 2012
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Abstract
An edge terminal structure of a trench power semiconductor device includes a first conductive-type substrate, a first conductive-type epitaxial layer thereon, a first electrode on a surface of the first conductive-type epitaxial layer, a second electrode on a back of the first conductive-type substrate, a first and a second field plates. The trench power semiconductor device includes an active area and an edge terminal area. A trench is in the surface of the first conductive-type epitaxial layer. The first field plate includes an L-shaped electric-plate, a gate insulation layer below the L-shaped electric-plate, and the first electrode on the L-shaped electric-plate. The second field plate includes a portion of the first electrode and an insulation layer between the portion of the first electrode and the first conductive-type epitaxial layer. The insulation layer covers the tail of the trench and completely covers the L-shaped electric-plate.
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