Trench insulated gate bipolar transistor and edge terminal structure including an L-shaped electric plate capable of raising a breakdown voltage
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United States of America Patent
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Nov 22, 2016
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N/A
app pub date -
Aug 6, 2015
filing date -
May 24, 2012
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Abstract
An edge terminal structure of a power semiconductor device includes a second conductive-type substrate, a first conductive-type buffer layer, a first conductive-type epitaxial layer, a first and a second electrodes, and a first and a second field plates. A trench is in a surface of the first conductive-type epitaxial layer in an edge terminal area beside an active area of the power semiconductor device. The first field plate includes at least a L-shaped electric-plate, a gate insulation layer under the L-shaped electric-plate, and the first electrode on the L-shaped electric-plate. The second field plate includes a portion of the first electrode and at least an insulation layer between the portion of the first electrode and the first conductive-type epitaxial layer. The insulation layer covers the tail of the trench and completely covers the L-shaped electric-plate.
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