Integration method for a vertical nanowire transistor
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United States of America Patent
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Nov 22, 2016
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Mar 23, 2016
filing date -
Oct 26, 2015
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Abstract
The present invention discloses a method for integrating a vertical nanowire transistor and belongs to a field of field effect transistor logic device in a CMOS ultra-large scale integrated circuit (ULSI). The method realizes the integration of the vertical-nanowire transistor by combining selective epitaxy and replacement gate on sidewall. In comparison with an existing method for forming a vertical nanowire channel by etching, a size and shape of a cross section of a device channel can be accurately controlled, a consistency of device characteristic can be improved, and an etching damage during the forming of a channel in the existing method can be avoided, thereby the device performance can be improved.
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