Method of forming an interconnect structure
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United States of America Patent
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Nov 22, 2016
Grant Date -
Jul 12, 2012
app pub date -
Mar 15, 2012
filing date -
Jan 7, 2010
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Abstract
An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal.
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