Ion implanter, ion implantation method, and beam measurement apparatus
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United States of America Patent
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Nov 22, 2016
Grant Date -
Feb 11, 2016
app pub date -
Aug 7, 2015
filing date -
Aug 8, 2014
priority date (Note) -
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Abstract
An ion implanter includes: a beam deflector that deflects an ion beam passing through a previous stage beam path and outputs the beam to pass through a subsequent stage beam path toward a wafer; a beam filter slit that partially shields the beam traveling through the subsequent stage beam path and allows passage of a beam component having a predetermined trajectory toward the wafer; a dose cup that is disposed between the beam deflector and the beam filter slit and measures a part of the beam exiting from the beam deflector as a beam current; and a trajectory limiting mechanism that is disposed between the beam deflector and the dose cup and prevents a beam component having a trajectory deviated from the predetermined trajectory from being incident to a measurement region of the dose cup.
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